Relation of Threshold Voltage and Scaling Theory for Double Gate MOSFET
نویسندگان
چکیده
منابع مشابه
Gate Length Scaling and Threshold Voltage Control of Double-Gate MOSFETs
Abstract In the nanoscale regime, the double-gate MOSFET can provide superior short-channel behavior. For this structure, device scaling issues are explored. Gate length scaling will be limited by the ability to control off-state leakage current due to quantum tunneling and thermionic emission between the source and drain as well as band-to-band tunneling between the body and drain. Lateral S/D...
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ژورنال
عنوان ژورنال: The Journal of the Korean Institute of Information and Communication Engineering
سال: 2012
ISSN: 2234-4772
DOI: 10.6109/jkiice.2012.16.5.982